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| inchange semiconductor isc product specification isc silicon npn power transistor BDY80 description continuous collector current-i c = 4a collector power dissipation- : p c = 36w @t c = 25 complement to type bdy82 applications designed for general purpose switching and amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 40 v v cex collector-emitter voltage v be = -1.5v 40 v v ceo collector-emitter voltage 35 v v ebo emitter-base voltage 10 v i c collector current-continuous 4 a i b b base current-continuous 2 a p c collector power dissipation@t c =25 36 w t j junction temperature 150 t stg storage temperature -55~175 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 3.5 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BDY80 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma; i b = 0 35 v v (br)cbo collector-base breakdown voltage i c = 10ma; i e = 0 40 v v (br)ebo emitter-base breakdown voltage i e = 10ma; i c = 0 10 v v ce (sat) collector-emitter saturation voltage i c = 1a; i b = 0.05a b 1.0 v v be( on ) base-emitter on voltage i c = 0.5a; v ce = 5v 0.9 v i ceo collector cutoff current v ce = 20v; i b = 0 b 10 ma i cbo collector cutoff current v cb = 20v; i e = 0 0.2 ma i ebo emitter cutoff current v eb = 5v; i c = 0 0.1 ma h fe-1 dc current gain i c = 0.5a; v ce = 5v 40 240 h fe-2 dc current gain i c = 1a; v ce = 5v 20 f t current gain-bandwidth product i c = 0.5a; v ce = 10v 1 mhz ? h fe- 1 classifications a b c 40-80 70-140 120-240 isc website www.iscsemi.cn 2 |
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